optoelectronic diodes
英
美
光电子二极管
双语例句
- The optoelectronic integration of porous Si light-emitting diodes into a microelectronic circuit has been realized.
多孔硅是硅基发光材料的一个重大突破，并实现了多孔硅发光二极管与集成电路的集成。 - The work of the last part of this thesis focuses on theoretical analysis and optimization of the organic/ polymeric optoelectronic devices with asymmetric microcavity structurers: top-emitting light emitting diodes ( TELED's) and photodiodes.
论文的最后一部分对具有非对称微腔结构的有机光电子器件：顶发射型发光二极管和光电二极管的光学特性进行了详细分析和优化。 - ZnO-based semiconductor optoelectronic devices include ultraviolet detector, light emitting diodes ( LEDs) and laser diodes ( LDs), etc.
氧化锌基半导体光电器件主要包括紫外探测器、发光二极管（LED）和半导体激光器（LD）等。 - Furthermore, ZnO is considered as a promising optoelectronic material with potential applications in light emitting diodes and laser diodes due to its wide direct bandgap ( 3.37eV) and large exciton binding energy ( 60meV).
由于ZnO是直接带隙宽禁带（3.37eV）半导体并具有较大的激子束缚能（60meV），因此也是一种很有前景的光电子材料，有可能应用于发光二极管和激光二极管等。 - The organic optoelectronic materials have been extensively used in the filed of organic photovoltaic cells, light emitting diodes, organic field-effect transistors, and organic sensors.
有机光电材料在有机光伏电池、发光二极管、场效应晶体管、以及传感器等领域有着广泛的应用。 - ZnO, with a wide bandgap ( 3.37eV) at room temperature and larger exciton binding energy ( 60meV), is a II-VI compound semiconductor material, and has wide application prospects in optoelectronic devices such as short-wavelength laser diodes and ultraviolet photodetectors.
ZnO是Ⅱ-Ⅵ族宽带隙半导体材料，室温下禁带宽度约为3.37eV，激子束缚能约为60meV，在短波长激光二极管与紫外光探测器等光电器件领域具有非常广阔的应用前景。 - They have been intensively studied due to such interesting features and their potential for optoelectronic applications such as low-threshold lasers, light-emitting diodes, solar cells and nonlinear photonic devices.
由于这些特性和他们在低阈值激光器、发光二极管、太阳能电池和非线性光子器件等方面的潜在应用，使得量子点被人们深入和广泛的研究。